| Issue |
ESOMAT 2009
2009
|
|
|---|---|---|
| Article Number | 02012 | |
| Number of page(s) | 4 | |
| Section | Principles, Simulations, Materials: Background | |
| DOI | https://doi.org/10.1051/esomat/200902012 | |
| Published online | 01 September 2009 | |
DOI: 10.1051/esomat/200902012
Transformation Behavior of Low Temperature Crystallized TiNi Shape Memory Alloy Films
Yoichi Kishi, Noriaki Ikenaga, Noriyuki Sakudo and Zenjiro YajimaResearch Laboratory for Integrated Systems, AMS R and D Center, Kanazawa Institute of Technology 3-1 Yatsukaho, Hakusan, Ishikawa 924-0838, Japan
kishi@neptune.kanazawa-it.ac.jp
Published online: 1 September 2009
Abstract
Transformation behavior of TiNi SMA films sputter-deposited on Si(001) and polyimide substrates was observed. An RF magnetron sputtering apparatus equipped with four separate confocal sources as well as with a heating and ion-irradiating system for substrates was used to make the films crystalline. Without using the system, the films deposited on ambient-temperature substrate have been amorphous. However, crystallized film is deposited even at 473 K of substrate temperature applying pulse bias voltage to the substrate. Shape memory effect of the crystallized film which was sputter-deposited on a polyimide sheet of 0.025 mm in thickness was observed. From the relationship between the normalized curvature of film and temperature, it was recognized that the start and finish temperatures of shape changes were 329 K and 399 K on heating process, respectively. While on cooling process, its reverse shape changes were observed. The shape was recovered to the original curvature at about 315 K.
© Owned by the authors, published by EDP Sciences 2009